FAST RECOVERY DIODE AND METHOD FOR MANUFACTURING THE SAME

A fast recovery diode includes a substrate; an epitaxial layer formed on the substrate; a P-type low-concentration doping region formed in an upper portion of the epitaxial layer and a P-type high-concentration doping region formed on the P-type low-concentration doping region; a P-type guard ring f...

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Bibliographische Detailangaben
Hauptverfasser: PARK, Chan Ho, KIM, Ho Hyun, JO, Young Seo, LIM, Ji Yong
Format: Patent
Sprache:eng
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