BACKSIDE GATE CONTACT, BACKSIDE GATE ETCH STOP LAYER, AND METHODS OF FORMING SAME

A semiconductor device includes a backside gate etch stop layer (ESL) on a backside of a first gate stack, wherein a plurality of first nanostructures overlaps the backside gate ESL. The backside gate ESL may comprise a high-k dielectric material. The semiconductor device further includes the plural...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Ho, Wei-De, Liao, Szuya
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!