RADIO FREQUENCY SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING A RADIO FREQUENCY SEMICONDUCTOR DEVICE

A radio frequency (RF) semiconductor device to process RF signals in an operating frequency range is provided which includes, a semiconductor chip including a first surface, a second surface opposite to the first surface and sidewalls, the semiconductor chip including an active chip area, a redistri...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: HARTNER, Walter, ERDÖL, Tuncay, KORNPROBST, Simon
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator HARTNER, Walter
ERDÖL, Tuncay
KORNPROBST, Simon
description A radio frequency (RF) semiconductor device to process RF signals in an operating frequency range is provided which includes, a semiconductor chip including a first surface, a second surface opposite to the first surface and sidewalls, the semiconductor chip including an active chip area, a redistribution layer including a first side, the first side of the redistribution layer facing the first surface of the semiconductor chip, an RF absorption layer external to the active chip area, wherein the RF absorption layer includes a doped semiconductor material.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2024290733A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2024290733A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2024290733A13</originalsourceid><addsrcrecordid>eNrjZEgLcnTx9FdwC3INDHX1c45UCHb19XT293MJdQ7xD1JwcQ3zdHZVcPRzUfB1DfHwd1FwA4q6OToFeTo7hnj6uSs4KhBjAg8Da1piTnEqL5TmZlB2cw1x9tBNLciPTy0uSExOzUstiQ8NNjIwMjGyNDA3NnY0NCZOFQCGajX3</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>RADIO FREQUENCY SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING A RADIO FREQUENCY SEMICONDUCTOR DEVICE</title><source>esp@cenet</source><creator>HARTNER, Walter ; ERDÖL, Tuncay ; KORNPROBST, Simon</creator><creatorcontrib>HARTNER, Walter ; ERDÖL, Tuncay ; KORNPROBST, Simon</creatorcontrib><description>A radio frequency (RF) semiconductor device to process RF signals in an operating frequency range is provided which includes, a semiconductor chip including a first surface, a second surface opposite to the first surface and sidewalls, the semiconductor chip including an active chip area, a redistribution layer including a first side, the first side of the redistribution layer facing the first surface of the semiconductor chip, an RF absorption layer external to the active chip area, wherein the RF absorption layer includes a doped semiconductor material.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20240829&amp;DB=EPODOC&amp;CC=US&amp;NR=2024290733A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25544,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20240829&amp;DB=EPODOC&amp;CC=US&amp;NR=2024290733A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HARTNER, Walter</creatorcontrib><creatorcontrib>ERDÖL, Tuncay</creatorcontrib><creatorcontrib>KORNPROBST, Simon</creatorcontrib><title>RADIO FREQUENCY SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING A RADIO FREQUENCY SEMICONDUCTOR DEVICE</title><description>A radio frequency (RF) semiconductor device to process RF signals in an operating frequency range is provided which includes, a semiconductor chip including a first surface, a second surface opposite to the first surface and sidewalls, the semiconductor chip including an active chip area, a redistribution layer including a first side, the first side of the redistribution layer facing the first surface of the semiconductor chip, an RF absorption layer external to the active chip area, wherein the RF absorption layer includes a doped semiconductor material.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZEgLcnTx9FdwC3INDHX1c45UCHb19XT293MJdQ7xD1JwcQ3zdHZVcPRzUfB1DfHwd1FwA4q6OToFeTo7hnj6uSs4KhBjAg8Da1piTnEqL5TmZlB2cw1x9tBNLciPTy0uSExOzUstiQ8NNjIwMjGyNDA3NnY0NCZOFQCGajX3</recordid><startdate>20240829</startdate><enddate>20240829</enddate><creator>HARTNER, Walter</creator><creator>ERDÖL, Tuncay</creator><creator>KORNPROBST, Simon</creator><scope>EVB</scope></search><sort><creationdate>20240829</creationdate><title>RADIO FREQUENCY SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING A RADIO FREQUENCY SEMICONDUCTOR DEVICE</title><author>HARTNER, Walter ; ERDÖL, Tuncay ; KORNPROBST, Simon</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2024290733A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2024</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>HARTNER, Walter</creatorcontrib><creatorcontrib>ERDÖL, Tuncay</creatorcontrib><creatorcontrib>KORNPROBST, Simon</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HARTNER, Walter</au><au>ERDÖL, Tuncay</au><au>KORNPROBST, Simon</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>RADIO FREQUENCY SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING A RADIO FREQUENCY SEMICONDUCTOR DEVICE</title><date>2024-08-29</date><risdate>2024</risdate><abstract>A radio frequency (RF) semiconductor device to process RF signals in an operating frequency range is provided which includes, a semiconductor chip including a first surface, a second surface opposite to the first surface and sidewalls, the semiconductor chip including an active chip area, a redistribution layer including a first side, the first side of the redistribution layer facing the first surface of the semiconductor chip, an RF absorption layer external to the active chip area, wherein the RF absorption layer includes a doped semiconductor material.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US2024290733A1
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title RADIO FREQUENCY SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING A RADIO FREQUENCY SEMICONDUCTOR DEVICE
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-28T02%3A40%3A27IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=HARTNER,%20Walter&rft.date=2024-08-29&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2024290733A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true