FIN FIELD-EFFECT TRANSISTOR DEVICE AND METHOD

A method of forming a semiconductor device includes forming a first dummy gate structure and a second dummy gate structure over a fin; forming a first dielectric layer around the first dummy gate structure and around the second dummy gate structure; removing the first dummy gate structure and the se...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Wu, Shao-Jyun, Pan, Sheng-Liang
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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