Forming Source And Drain Features In Semiconductor Devices

A method includes forming a first portion of a spacer layer over a first fin and a second portion of the spacer layer over a second fin, performing a first etching process to recess the first portion of the spacer layer with respect to the second portion of the spacer layer to form first spacers on...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	LO, Dave, LIAO, Chih-Teng, WANG, Shu Wen, HSIEH, Jui Fu, CHEN, Chih-Shan
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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