SEMICONDUCTOR DEVICE HAVING DEVICE ELEMENT STRUCTURES WITH PN JUNCTION FORMED IN ACTIVE REGION AND VOLTAGE WITHSTANDING RINGS FORMED IN PERIPHERY REGION SURROUNDING THE ACTIVE REGION AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

A semiconductor substrate is fabricated in which only first and second n−-type epitaxial layers are stacked on an n+-type starting substrate, a front surface of the substrate being a continuously flat surface from an active region to a chip end. In an edge termination region, as a voltage withstandi...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	HOSHI, Yasuyuki
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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