CARRIER SUBSTRATE
A carrier substrate is provided and has a first circuit structure and a second circuit structure on opposing sides of the carrier substrate, where on one routing region, a difference between a routing ratio of a first circuit layer of the first circuit structure and a routing ratio of a second circu...
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| creator | CHIEN, Hsiu-Fang SHIH, Wei-Hsin YAO, Yu-Tung HUANG, Chung-Yan CHANG, Ning-Hsu LIU, Jann-Tzung |
| description | A carrier substrate is provided and has a first circuit structure and a second circuit structure on opposing sides of the carrier substrate, where on one routing region, a difference between a routing ratio of a first circuit layer of the first circuit structure and a routing ratio of a second circuit layer of the second circuit structure is within 10%. Therefore, the difference between the routing ratios of the two opposing outermost circuit layers of the carrier substrate in specific target regions can be reduced, so as to avoid a warpage of the carrier substrate due to a great difference in metal distribution areas. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2024266302A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2024266302A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2024266302A13</originalsourceid><addsrcrecordid>eNrjZBB0dgwK8nQNUggOdQoOCXIMceVhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfGhwUYGRiZGZmbGBkaOhsbEqQIAoJUexw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>CARRIER SUBSTRATE</title><source>esp@cenet</source><creator>CHIEN, Hsiu-Fang ; SHIH, Wei-Hsin ; YAO, Yu-Tung ; HUANG, Chung-Yan ; CHANG, Ning-Hsu ; LIU, Jann-Tzung</creator><creatorcontrib>CHIEN, Hsiu-Fang ; SHIH, Wei-Hsin ; YAO, Yu-Tung ; HUANG, Chung-Yan ; CHANG, Ning-Hsu ; LIU, Jann-Tzung</creatorcontrib><description>A carrier substrate is provided and has a first circuit structure and a second circuit structure on opposing sides of the carrier substrate, where on one routing region, a difference between a routing ratio of a first circuit layer of the first circuit structure and a routing ratio of a second circuit layer of the second circuit structure is within 10%. Therefore, the difference between the routing ratios of the two opposing outermost circuit layers of the carrier substrate in specific target regions can be reduced, so as to avoid a warpage of the carrier substrate due to a great difference in metal distribution areas.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240808&DB=EPODOC&CC=US&NR=2024266302A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240808&DB=EPODOC&CC=US&NR=2024266302A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>CHIEN, Hsiu-Fang</creatorcontrib><creatorcontrib>SHIH, Wei-Hsin</creatorcontrib><creatorcontrib>YAO, Yu-Tung</creatorcontrib><creatorcontrib>HUANG, Chung-Yan</creatorcontrib><creatorcontrib>CHANG, Ning-Hsu</creatorcontrib><creatorcontrib>LIU, Jann-Tzung</creatorcontrib><title>CARRIER SUBSTRATE</title><description>A carrier substrate is provided and has a first circuit structure and a second circuit structure on opposing sides of the carrier substrate, where on one routing region, a difference between a routing ratio of a first circuit layer of the first circuit structure and a routing ratio of a second circuit layer of the second circuit structure is within 10%. Therefore, the difference between the routing ratios of the two opposing outermost circuit layers of the carrier substrate in specific target regions can be reduced, so as to avoid a warpage of the carrier substrate due to a great difference in metal distribution areas.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBB0dgwK8nQNUggOdQoOCXIMceVhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfGhwUYGRiZGZmbGBkaOhsbEqQIAoJUexw</recordid><startdate>20240808</startdate><enddate>20240808</enddate><creator>CHIEN, Hsiu-Fang</creator><creator>SHIH, Wei-Hsin</creator><creator>YAO, Yu-Tung</creator><creator>HUANG, Chung-Yan</creator><creator>CHANG, Ning-Hsu</creator><creator>LIU, Jann-Tzung</creator><scope>EVB</scope></search><sort><creationdate>20240808</creationdate><title>CARRIER SUBSTRATE</title><author>CHIEN, Hsiu-Fang ; SHIH, Wei-Hsin ; YAO, Yu-Tung ; HUANG, Chung-Yan ; CHANG, Ning-Hsu ; LIU, Jann-Tzung</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2024266302A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2024</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>CHIEN, Hsiu-Fang</creatorcontrib><creatorcontrib>SHIH, Wei-Hsin</creatorcontrib><creatorcontrib>YAO, Yu-Tung</creatorcontrib><creatorcontrib>HUANG, Chung-Yan</creatorcontrib><creatorcontrib>CHANG, Ning-Hsu</creatorcontrib><creatorcontrib>LIU, Jann-Tzung</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>CHIEN, Hsiu-Fang</au><au>SHIH, Wei-Hsin</au><au>YAO, Yu-Tung</au><au>HUANG, Chung-Yan</au><au>CHANG, Ning-Hsu</au><au>LIU, Jann-Tzung</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>CARRIER SUBSTRATE</title><date>2024-08-08</date><risdate>2024</risdate><abstract>A carrier substrate is provided and has a first circuit structure and a second circuit structure on opposing sides of the carrier substrate, where on one routing region, a difference between a routing ratio of a first circuit layer of the first circuit structure and a routing ratio of a second circuit layer of the second circuit structure is within 10%. Therefore, the difference between the routing ratios of the two opposing outermost circuit layers of the carrier substrate in specific target regions can be reduced, so as to avoid a warpage of the carrier substrate due to a great difference in metal distribution areas.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | CARRIER SUBSTRATE |
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