SEMICONDUCTOR MANUFACTURING DEVICE
A semiconductor manufacturing device comprising a support unit in a chamber. A showerhead disposed between first and second plasma regions. First and second gas supply units injecting first and second process gases, respectively, into the second plasma region through the showerhead. The showerhead i...
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| creator | LEE, Min Su JEON, Hyeong Un KANG, Yon Joo LEE, Won Ki KIM, Yeon Tae JEON, Hyeon Jin KIM, Yi Hwan |
| description | A semiconductor manufacturing device comprising a support unit in a chamber. A showerhead disposed between first and second plasma regions. First and second gas supply units injecting first and second process gases, respectively, into the second plasma region through the showerhead. The showerhead includes plasma penetration portions passing a portion of the plasma generated in the first plasma region therethrough. First gas flow paths injecting the first process gas into a first zone of the showerhead. Second gas flow paths injecting the second process gas into a second zone of the showerhead that surrounds the first zone. First and second cavities connected to the first and second gas flow paths, respectively. The first and second cavities diffusing the first and second process gases, respectively. First and second gas spraying holes connected to the first and second cavities, respectively, and facing the second plasma region. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2024266148A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2024266148A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2024266148A13</originalsourceid><addsrcrecordid>eNrjZFAKdvX1dPb3cwl1DvEPUvB19At1c3QOCQ3y9HNXcHEN83R25WFgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8aHBRgZGJkZmZoYmFo6GxsSpAgDgHSOm</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SEMICONDUCTOR MANUFACTURING DEVICE</title><source>esp@cenet</source><creator>LEE, Min Su ; JEON, Hyeong Un ; KANG, Yon Joo ; LEE, Won Ki ; KIM, Yeon Tae ; JEON, Hyeon Jin ; KIM, Yi Hwan</creator><creatorcontrib>LEE, Min Su ; JEON, Hyeong Un ; KANG, Yon Joo ; LEE, Won Ki ; KIM, Yeon Tae ; JEON, Hyeon Jin ; KIM, Yi Hwan</creatorcontrib><description>A semiconductor manufacturing device comprising a support unit in a chamber. A showerhead disposed between first and second plasma regions. First and second gas supply units injecting first and second process gases, respectively, into the second plasma region through the showerhead. The showerhead includes plasma penetration portions passing a portion of the plasma generated in the first plasma region therethrough. First gas flow paths injecting the first process gas into a first zone of the showerhead. Second gas flow paths injecting the second process gas into a second zone of the showerhead that surrounds the first zone. First and second cavities connected to the first and second gas flow paths, respectively. The first and second cavities diffusing the first and second process gases, respectively. First and second gas spraying holes connected to the first and second cavities, respectively, and facing the second plasma region.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240808&DB=EPODOC&CC=US&NR=2024266148A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240808&DB=EPODOC&CC=US&NR=2024266148A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LEE, Min Su</creatorcontrib><creatorcontrib>JEON, Hyeong Un</creatorcontrib><creatorcontrib>KANG, Yon Joo</creatorcontrib><creatorcontrib>LEE, Won Ki</creatorcontrib><creatorcontrib>KIM, Yeon Tae</creatorcontrib><creatorcontrib>JEON, Hyeon Jin</creatorcontrib><creatorcontrib>KIM, Yi Hwan</creatorcontrib><title>SEMICONDUCTOR MANUFACTURING DEVICE</title><description>A semiconductor manufacturing device comprising a support unit in a chamber. A showerhead disposed between first and second plasma regions. First and second gas supply units injecting first and second process gases, respectively, into the second plasma region through the showerhead. The showerhead includes plasma penetration portions passing a portion of the plasma generated in the first plasma region therethrough. First gas flow paths injecting the first process gas into a first zone of the showerhead. Second gas flow paths injecting the second process gas into a second zone of the showerhead that surrounds the first zone. First and second cavities connected to the first and second gas flow paths, respectively. The first and second cavities diffusing the first and second process gases, respectively. First and second gas spraying holes connected to the first and second cavities, respectively, and facing the second plasma region.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFAKdvX1dPb3cwl1DvEPUvB19At1c3QOCQ3y9HNXcHEN83R25WFgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8aHBRgZGJkZmZoYmFo6GxsSpAgDgHSOm</recordid><startdate>20240808</startdate><enddate>20240808</enddate><creator>LEE, Min Su</creator><creator>JEON, Hyeong Un</creator><creator>KANG, Yon Joo</creator><creator>LEE, Won Ki</creator><creator>KIM, Yeon Tae</creator><creator>JEON, Hyeon Jin</creator><creator>KIM, Yi Hwan</creator><scope>EVB</scope></search><sort><creationdate>20240808</creationdate><title>SEMICONDUCTOR MANUFACTURING DEVICE</title><author>LEE, Min Su ; JEON, Hyeong Un ; KANG, Yon Joo ; LEE, Won Ki ; KIM, Yeon Tae ; JEON, Hyeon Jin ; KIM, Yi Hwan</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2024266148A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2024</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>LEE, Min Su</creatorcontrib><creatorcontrib>JEON, Hyeong Un</creatorcontrib><creatorcontrib>KANG, Yon Joo</creatorcontrib><creatorcontrib>LEE, Won Ki</creatorcontrib><creatorcontrib>KIM, Yeon Tae</creatorcontrib><creatorcontrib>JEON, Hyeon Jin</creatorcontrib><creatorcontrib>KIM, Yi Hwan</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LEE, Min Su</au><au>JEON, Hyeong Un</au><au>KANG, Yon Joo</au><au>LEE, Won Ki</au><au>KIM, Yeon Tae</au><au>JEON, Hyeon Jin</au><au>KIM, Yi Hwan</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR MANUFACTURING DEVICE</title><date>2024-08-08</date><risdate>2024</risdate><abstract>A semiconductor manufacturing device comprising a support unit in a chamber. A showerhead disposed between first and second plasma regions. First and second gas supply units injecting first and second process gases, respectively, into the second plasma region through the showerhead. The showerhead includes plasma penetration portions passing a portion of the plasma generated in the first plasma region therethrough. First gas flow paths injecting the first process gas into a first zone of the showerhead. Second gas flow paths injecting the second process gas into a second zone of the showerhead that surrounds the first zone. First and second cavities connected to the first and second gas flow paths, respectively. The first and second cavities diffusing the first and second process gases, respectively. First and second gas spraying holes connected to the first and second cavities, respectively, and facing the second plasma region.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | SEMICONDUCTOR MANUFACTURING DEVICE |
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