CROSS-POINT ARRAY REFRESH SCHEME
Technology is disclosed herein for refreshing threshold switching selectors in programmable resistance memory cells in cross-point memory arrays. The Vt of the threshold switching selector may drift over time. The memory system resets the Vt of the threshold switching selectors with a selector refre...
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creator | Franklin, Nathan Tran, Michael Nicolas Albert Grobis, Michael K Parkinson, Ward |
description | Technology is disclosed herein for refreshing threshold switching selectors in programmable resistance memory cells in cross-point memory arrays. The Vt of the threshold switching selector may drift over time. The memory system resets the Vt of the threshold switching selectors with a selector refresh operation and uses a separate data refresh operation to refresh data in programmable resistance memory elements. The data refresh operation itself may also refresh the selector. However, the threshold switching selector refresh operation is faster than the data refresh operation. Moreover, the selector refresh operation consumes much less power and/or current then the data refresh operation. The selector refresh operation may thus be performed at a higher rate than the data refresh operation. |
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The Vt of the threshold switching selector may drift over time. The memory system resets the Vt of the threshold switching selectors with a selector refresh operation and uses a separate data refresh operation to refresh data in programmable resistance memory elements. The data refresh operation itself may also refresh the selector. However, the threshold switching selector refresh operation is faster than the data refresh operation. Moreover, the selector refresh operation consumes much less power and/or current then the data refresh operation. The selector refresh operation may thus be performed at a higher rate than the data refresh operation.</description><language>eng</language><subject>CALCULATING ; COMPUTING ; COUNTING ; ELECTRIC DIGITAL DATA PROCESSING ; INFORMATION STORAGE ; PHYSICS ; STATIC STORES</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240808&DB=EPODOC&CC=US&NR=2024265958A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76294</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240808&DB=EPODOC&CC=US&NR=2024265958A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Franklin, Nathan</creatorcontrib><creatorcontrib>Tran, Michael Nicolas Albert</creatorcontrib><creatorcontrib>Grobis, Michael K</creatorcontrib><creatorcontrib>Parkinson, Ward</creatorcontrib><title>CROSS-POINT ARRAY REFRESH SCHEME</title><description>Technology is disclosed herein for refreshing threshold switching selectors in programmable resistance memory cells in cross-point memory arrays. The Vt of the threshold switching selector may drift over time. The memory system resets the Vt of the threshold switching selectors with a selector refresh operation and uses a separate data refresh operation to refresh data in programmable resistance memory elements. The data refresh operation itself may also refresh the selector. However, the threshold switching selector refresh operation is faster than the data refresh operation. Moreover, the selector refresh operation consumes much less power and/or current then the data refresh operation. The selector refresh operation may thus be performed at a higher rate than the data refresh operation.</description><subject>CALCULATING</subject><subject>COMPUTING</subject><subject>COUNTING</subject><subject>ELECTRIC DIGITAL DATA PROCESSING</subject><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFBwDvIPDtYN8Pf0C1FwDApyjFQIcnULcg32UAh29nD1deVhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfGhwUYGRiZGZqaWphaOhsbEqQIAhWEi9Q</recordid><startdate>20240808</startdate><enddate>20240808</enddate><creator>Franklin, Nathan</creator><creator>Tran, Michael Nicolas Albert</creator><creator>Grobis, Michael K</creator><creator>Parkinson, Ward</creator><scope>EVB</scope></search><sort><creationdate>20240808</creationdate><title>CROSS-POINT ARRAY REFRESH SCHEME</title><author>Franklin, Nathan ; Tran, Michael Nicolas Albert ; Grobis, Michael K ; Parkinson, Ward</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2024265958A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2024</creationdate><topic>CALCULATING</topic><topic>COMPUTING</topic><topic>COUNTING</topic><topic>ELECTRIC DIGITAL DATA PROCESSING</topic><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>Franklin, Nathan</creatorcontrib><creatorcontrib>Tran, Michael Nicolas Albert</creatorcontrib><creatorcontrib>Grobis, Michael K</creatorcontrib><creatorcontrib>Parkinson, Ward</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Franklin, Nathan</au><au>Tran, Michael Nicolas Albert</au><au>Grobis, Michael K</au><au>Parkinson, Ward</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>CROSS-POINT ARRAY REFRESH SCHEME</title><date>2024-08-08</date><risdate>2024</risdate><abstract>Technology is disclosed herein for refreshing threshold switching selectors in programmable resistance memory cells in cross-point memory arrays. The Vt of the threshold switching selector may drift over time. The memory system resets the Vt of the threshold switching selectors with a selector refresh operation and uses a separate data refresh operation to refresh data in programmable resistance memory elements. The data refresh operation itself may also refresh the selector. However, the threshold switching selector refresh operation is faster than the data refresh operation. Moreover, the selector refresh operation consumes much less power and/or current then the data refresh operation. The selector refresh operation may thus be performed at a higher rate than the data refresh operation.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | CALCULATING COMPUTING COUNTING ELECTRIC DIGITAL DATA PROCESSING INFORMATION STORAGE PHYSICS STATIC STORES |
title | CROSS-POINT ARRAY REFRESH SCHEME |
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