Selective Deposition of Passivating Layer During Spacer Etching
A method for processing a substrate includes: forming a mandrel over the substrate including an underlying layer, the mandrel having a top surface and sidewalls, the substrate including an exposed surface including a portion of the underlying layer; conformally depositing a spacer material over the...
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| creator | Chen, Ya-Ming Liu, Eric Chih-Fang Chang, Shihsheng Biolsi, Petr |
| description | A method for processing a substrate includes: forming a mandrel over the substrate including an underlying layer, the mandrel having a top surface and sidewalls, the substrate including an exposed surface including a portion of the underlying layer; conformally depositing a spacer material over the substrate, the spacer material covering the top surface and the sidewalls of the mandrel and the portion of the underlying layer; in a plasma processing chamber, exposing the substrate to a plasma generated in the plasma processing chamber from a first halogen-containing process gas, a second halogen-containing process gas, and a carbon-containing passivating agent, the exposing anisotropically etching the spacer material; and removing the mandrel to form free-standing spacers from sidewall portions of the spacer material covering the sidewalls of the mandrel. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2024258108A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2024258108A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2024258108A13</originalsourceid><addsrcrecordid>eNrjZLAPTs1JTS7JLEtVcEktyC_OLMnMz1PIT1MISCwuzixLLMnMS1fwSaxMLVJwKS0CcYILEpOBPNeS5Awgl4eBNS0xpziVF0pzMyi7uYY4e-gCDYtPLQapzUstiQ8NNjIwMjEytTA0sHA0NCZOFQBATzGg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Selective Deposition of Passivating Layer During Spacer Etching</title><source>esp@cenet</source><creator>Chen, Ya-Ming ; Liu, Eric Chih-Fang ; Chang, Shihsheng ; Biolsi, Petr</creator><creatorcontrib>Chen, Ya-Ming ; Liu, Eric Chih-Fang ; Chang, Shihsheng ; Biolsi, Petr</creatorcontrib><description>A method for processing a substrate includes: forming a mandrel over the substrate including an underlying layer, the mandrel having a top surface and sidewalls, the substrate including an exposed surface including a portion of the underlying layer; conformally depositing a spacer material over the substrate, the spacer material covering the top surface and the sidewalls of the mandrel and the portion of the underlying layer; in a plasma processing chamber, exposing the substrate to a plasma generated in the plasma processing chamber from a first halogen-containing process gas, a second halogen-containing process gas, and a carbon-containing passivating agent, the exposing anisotropically etching the spacer material; and removing the mandrel to form free-standing spacers from sidewall portions of the spacer material covering the sidewalls of the mandrel.</description><language>eng</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; BASIC ELECTRIC ELEMENTS ; CINEMATOGRAPHY ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; SEMICONDUCTOR DEVICES</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240801&DB=EPODOC&CC=US&NR=2024258108A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76516</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240801&DB=EPODOC&CC=US&NR=2024258108A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Chen, Ya-Ming</creatorcontrib><creatorcontrib>Liu, Eric Chih-Fang</creatorcontrib><creatorcontrib>Chang, Shihsheng</creatorcontrib><creatorcontrib>Biolsi, Petr</creatorcontrib><title>Selective Deposition of Passivating Layer During Spacer Etching</title><description>A method for processing a substrate includes: forming a mandrel over the substrate including an underlying layer, the mandrel having a top surface and sidewalls, the substrate including an exposed surface including a portion of the underlying layer; conformally depositing a spacer material over the substrate, the spacer material covering the top surface and the sidewalls of the mandrel and the portion of the underlying layer; in a plasma processing chamber, exposing the substrate to a plasma generated in the plasma processing chamber from a first halogen-containing process gas, a second halogen-containing process gas, and a carbon-containing passivating agent, the exposing anisotropically etching the spacer material; and removing the mandrel to form free-standing spacers from sidewall portions of the spacer material covering the sidewalls of the mandrel.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLAPTs1JTS7JLEtVcEktyC_OLMnMz1PIT1MISCwuzixLLMnMS1fwSaxMLVJwKS0CcYILEpOBPNeS5Awgl4eBNS0xpziVF0pzMyi7uYY4e-gCDYtPLQapzUstiQ8NNjIwMjEytTA0sHA0NCZOFQBATzGg</recordid><startdate>20240801</startdate><enddate>20240801</enddate><creator>Chen, Ya-Ming</creator><creator>Liu, Eric Chih-Fang</creator><creator>Chang, Shihsheng</creator><creator>Biolsi, Petr</creator><scope>EVB</scope></search><sort><creationdate>20240801</creationdate><title>Selective Deposition of Passivating Layer During Spacer Etching</title><author>Chen, Ya-Ming ; Liu, Eric Chih-Fang ; Chang, Shihsheng ; Biolsi, Petr</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2024258108A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2024</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Chen, Ya-Ming</creatorcontrib><creatorcontrib>Liu, Eric Chih-Fang</creatorcontrib><creatorcontrib>Chang, Shihsheng</creatorcontrib><creatorcontrib>Biolsi, Petr</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Chen, Ya-Ming</au><au>Liu, Eric Chih-Fang</au><au>Chang, Shihsheng</au><au>Biolsi, Petr</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Selective Deposition of Passivating Layer During Spacer Etching</title><date>2024-08-01</date><risdate>2024</risdate><abstract>A method for processing a substrate includes: forming a mandrel over the substrate including an underlying layer, the mandrel having a top surface and sidewalls, the substrate including an exposed surface including a portion of the underlying layer; conformally depositing a spacer material over the substrate, the spacer material covering the top surface and the sidewalls of the mandrel and the portion of the underlying layer; in a plasma processing chamber, exposing the substrate to a plasma generated in the plasma processing chamber from a first halogen-containing process gas, a second halogen-containing process gas, and a carbon-containing passivating agent, the exposing anisotropically etching the spacer material; and removing the mandrel to form free-standing spacers from sidewall portions of the spacer material covering the sidewalls of the mandrel.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES |
| title | Selective Deposition of Passivating Layer During Spacer Etching |
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