EMBEDDED CAPACITORS WITH BURIED METAL LAYER UNDERNEATH BULK ACOUSTIC WAVE RESONATOR FOR ELECTROMECHANICAL COUPLING COEFFICIENT CONTROL

Aspects and embodiments disclosed herein include a film bulk acoustic wave resonator comprising a substrate including a layer of dielectric material disposed on an upper surface of the substrate, a layer of piezoelectric material, a top electrode disposed on a top surface of the layer of piezoelectr...

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Bibliographische Detailangaben
Hauptverfasser: Shin, Kwang Jae, Pang, Xiangnan, Lee, Jae Hyung, Shon, Taecheol
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:Aspects and embodiments disclosed herein include a film bulk acoustic wave resonator comprising a substrate including a layer of dielectric material disposed on an upper surface of the substrate, a layer of piezoelectric material, a top electrode disposed on a top surface of the layer of piezoelectric material, a bottom electrode disposed on a bottom surface of the layer of piezoelectric material, a cavity defined between a lower surface of the bottom electrode and an upper surface of the layer of dielectric material, and a layer of conductive material buried within the layer of dielectric material at least partially beneath the cavity and the bottom electrode.