METHOD OF MANUFACTURING A SILICON BIPOLAR JUNCTION TRANSISTOR, AND A BJT

Disclosed is a method of manufacturing a silicon bipolar junction transistor device, the method comprising a sequence of steps including: depositing a polysilicon layer over at least a device region; depositing a dielectric layer over the polysilicon layer; patterning a photoresist layer and etching...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	John, Jay Paul, Sebel, Patrick, Kirchgessner, James Albert
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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