SEMICONDUCTOR DEVICE HAVING HIGH BREAKDOWN VOLTAGE CAPACITOR

A semiconductor device includes a bottom metal line and a bottom electrode disposed on a substrate, a thick inter-metal dielectric layer disposed on the bottom metal line and the bottom electrode, a first via disposed on the bottom metal line disposed in the thick inter-metal dielectric layer, a sec...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	JEONG, Jong Yeul, KOO, Sang Geun, SHEEN, Jeong Ho, SHIN, Kang Sup
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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