PLASMA CONTROL DEVICE AND PLASMA CONTROL METHOD

Provided is a plasma control method including applying gas to a chamber having a wafer loaded therein, generating plasma by applying both radio frequency (RF) power associated with a first voltage at a first frequency and a second voltage at a second frequency that is lower than the first frequency...

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Bibliographische Detailangaben
Hauptverfasser: HUR, Minyoung, KIM, Jihwan, KIM, Namkyun, KIM, Kyungsun, KIM, Yirop, KIM, Changho, KANG, Hyeongmo, KO, Illsang, SHIM, Seungbo, GWAK, Dooyoung
Format: Patent
Sprache:eng
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