Tunneling Magnetoresistance Device With Magnetically Soft High Moment Free Layer

The present embodiments relate to a tunnel magnetoresistance (TMR) element. The TMR element can include a free layer comprising a metallic alloy that is doped using a dopant element. In some instances, the metallic alloy comprises a cobalt-iron (CoFe) alloy. The present embodiments relate to doping...

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Hauptverfasser:	Zhang, Kunliang, Oh, Sangmun, Gao, Zheng, Wang, Hui-Chuan, Kawasaki, Shohei
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Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRICITY INDUCTANCES INFORMATION STORAGE INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER MAGNETS PHYSICS SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES TRANSFORMERS
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creator	Zhang, Kunliang Oh, Sangmun Gao, Zheng Wang, Hui-Chuan Kawasaki, Shohei
description	The present embodiments relate to a tunnel magnetoresistance (TMR) element. The TMR element can include a free layer comprising a metallic alloy that is doped using a dopant element. In some instances, the metallic alloy comprises a cobalt-iron (CoFe) alloy. The present embodiments relate to doping a small amount of an element (e.g., hafnium (Hf), tantalum (Ta), Yttrium (Y)) in a high flux CoFe layer of a tunnel magnetoresistance (TMR) element. The small amount of dopant can suppress a long-range order in the CoFe film. The amorphous state of a CoFe alloy can be induced by the dopant and result in a magnetically soft layer. A resistance of the TMR element can be modified based on an application of an external magnetic field to the free layer and the pin layer.
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fullrecord	<record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2024233999A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2024233999A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2024233999A13</originalsourceid><addsrcrecordid>eNrjZAgIKc3LS83JzEtX8E1Mz0styS9KLc4sLknMS05VcEktywRS4ZklGVDZzOTEnJxKheD8tBIFj8x0oHB-bmpeiYJbUWqqgk9iZWoRDwNrWmJOcSovlOZmUHZzDXH20E0tyI9PLS5ITE4FmhMfGmxkYGRiZGxsaWnpaGhMnCoAV0U34g</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Tunneling Magnetoresistance Device With Magnetically Soft High Moment Free Layer</title><source>esp@cenet</source><creator>Zhang, Kunliang ; Oh, Sangmun ; Gao, Zheng ; Wang, Hui-Chuan ; Kawasaki, Shohei</creator><creatorcontrib>Zhang, Kunliang ; Oh, Sangmun ; Gao, Zheng ; Wang, Hui-Chuan ; Kawasaki, Shohei</creatorcontrib><description>The present embodiments relate to a tunnel magnetoresistance (TMR) element. The TMR element can include a free layer comprising a metallic alloy that is doped using a dopant element. In some instances, the metallic alloy comprises a cobalt-iron (CoFe) alloy. The present embodiments relate to doping a small amount of an element (e.g., hafnium (Hf), tantalum (Ta), Yttrium (Y)) in a high flux CoFe layer of a tunnel magnetoresistance (TMR) element. The small amount of dopant can suppress a long-range order in the CoFe film. The amorphous state of a CoFe alloy can be induced by the dopant and result in a magnetically soft layer. A resistance of the TMR element can be modified based on an application of an external magnetic field to the free layer and the pin layer.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRICITY ; INDUCTANCES ; INFORMATION STORAGE ; INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER ; MAGNETS ; PHYSICS ; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES ; TRANSFORMERS</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240711&DB=EPODOC&CC=US&NR=2024233999A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25555,76308</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240711&DB=EPODOC&CC=US&NR=2024233999A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Zhang, Kunliang</creatorcontrib><creatorcontrib>Oh, Sangmun</creatorcontrib><creatorcontrib>Gao, Zheng</creatorcontrib><creatorcontrib>Wang, Hui-Chuan</creatorcontrib><creatorcontrib>Kawasaki, Shohei</creatorcontrib><title>Tunneling Magnetoresistance Device With Magnetically Soft High Moment Free Layer</title><description>The present embodiments relate to a tunnel magnetoresistance (TMR) element. The TMR element can include a free layer comprising a metallic alloy that is doped using a dopant element. In some instances, the metallic alloy comprises a cobalt-iron (CoFe) alloy. The present embodiments relate to doping a small amount of an element (e.g., hafnium (Hf), tantalum (Ta), Yttrium (Y)) in a high flux CoFe layer of a tunnel magnetoresistance (TMR) element. The small amount of dopant can suppress a long-range order in the CoFe film. The amorphous state of a CoFe alloy can be induced by the dopant and result in a magnetically soft layer. A resistance of the TMR element can be modified based on an application of an external magnetic field to the free layer and the pin layer.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRICITY</subject><subject>INDUCTANCES</subject><subject>INFORMATION STORAGE</subject><subject>INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER</subject><subject>MAGNETS</subject><subject>PHYSICS</subject><subject>SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES</subject><subject>TRANSFORMERS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZAgIKc3LS83JzEtX8E1Mz0styS9KLc4sLknMS05VcEktywRS4ZklGVDZzOTEnJxKheD8tBIFj8x0oHB-bmpeiYJbUWqqgk9iZWoRDwNrWmJOcSovlOZmUHZzDXH20E0tyI9PLS5ITE4FmhMfGmxkYGRiZGxsaWnpaGhMnCoAV0U34g</recordid><startdate>20240711</startdate><enddate>20240711</enddate><creator>Zhang, Kunliang</creator><creator>Oh, Sangmun</creator><creator>Gao, Zheng</creator><creator>Wang, Hui-Chuan</creator><creator>Kawasaki, Shohei</creator><scope>EVB</scope></search><sort><creationdate>20240711</creationdate><title>Tunneling Magnetoresistance Device With Magnetically Soft High Moment Free Layer</title><author>Zhang, Kunliang ; Oh, Sangmun ; Gao, Zheng ; Wang, Hui-Chuan ; Kawasaki, Shohei</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2024233999A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2024</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRICITY</topic><topic>INDUCTANCES</topic><topic>INFORMATION STORAGE</topic><topic>INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER</topic><topic>MAGNETS</topic><topic>PHYSICS</topic><topic>SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES</topic><topic>TRANSFORMERS</topic><toplevel>online_resources</toplevel><creatorcontrib>Zhang, Kunliang</creatorcontrib><creatorcontrib>Oh, Sangmun</creatorcontrib><creatorcontrib>Gao, Zheng</creatorcontrib><creatorcontrib>Wang, Hui-Chuan</creatorcontrib><creatorcontrib>Kawasaki, Shohei</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Zhang, Kunliang</au><au>Oh, Sangmun</au><au>Gao, Zheng</au><au>Wang, Hui-Chuan</au><au>Kawasaki, Shohei</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Tunneling Magnetoresistance Device With Magnetically Soft High Moment Free Layer</title><date>2024-07-11</date><risdate>2024</risdate><abstract>The present embodiments relate to a tunnel magnetoresistance (TMR) element. The TMR element can include a free layer comprising a metallic alloy that is doped using a dopant element. In some instances, the metallic alloy comprises a cobalt-iron (CoFe) alloy. The present embodiments relate to doping a small amount of an element (e.g., hafnium (Hf), tantalum (Ta), Yttrium (Y)) in a high flux CoFe layer of a tunnel magnetoresistance (TMR) element. The small amount of dopant can suppress a long-range order in the CoFe film. The amorphous state of a CoFe alloy can be induced by the dopant and result in a magnetically soft layer. A resistance of the TMR element can be modified based on an application of an external magnetic field to the free layer and the pin layer.</abstract><oa>free_for_read</oa></addata></record>
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subjects	BASIC ELECTRIC ELEMENTS ELECTRICITY INDUCTANCES INFORMATION STORAGE INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER MAGNETS PHYSICS SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES TRANSFORMERS
title	Tunneling Magnetoresistance Device With Magnetically Soft High Moment Free Layer
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