MEMORY DEVICE PRE-CHARGING COMMON SOURCE LINE AND OPERATING METHOD OF THE SAME

A method of operating a memory device, the method includes applying a pass voltage to a plurality of word lines during a word line setup period, applying an on-voltage to an unselected ground select line at a first time point during the word line setup period, increasing a voltage of the plurality o...

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Bibliographische Detailangaben

Hauptverfasser:	Park, Jonghoon, Park, Sangsoo, Yu, Jaeduk, Lee, Yohan
Format:	Patent
Sprache:	eng
Schlagworte:	INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
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