MEMORY DEVICE PRE-CHARGING COMMON SOURCE LINE AND OPERATING METHOD OF THE SAME

A method of operating a memory device, the method includes applying a pass voltage to a plurality of word lines during a word line setup period, applying an on-voltage to an unselected ground select line at a first time point during the word line setup period, increasing a voltage of the plurality o...

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Hauptverfasser:	Park, Jonghoon, Park, Sangsoo, Yu, Jaeduk, Lee, Yohan
Format:	Patent
Sprache:	eng
Schlagworte:	INFORMATION STORAGE PHYSICS STATIC STORES
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creator	Park, Jonghoon Park, Sangsoo Yu, Jaeduk Lee, Yohan
description	A method of operating a memory device, the method includes applying a pass voltage to a plurality of word lines during a word line setup period, applying an on-voltage to an unselected ground select line at a first time point during the word line setup period, increasing a voltage of the plurality of word lines by applying a pre-charge voltage to the common source line at a second time point during the word line setup period, applying an off-voltage to the unselected ground select line at a third time point during the word line setup period, and applying a ground voltage to the common source line at a fourth time point during the word line setup period.
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fullrecord	<record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2024221836A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2024221836A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2024221836A13</originalsourceid><addsrcrecordid>eNrjZPDzdfX1D4pUcHEN83R2VQgIctV19nAMcvf0c1dw9vf19fdTCPYPDQJK-Xj6uSo4-rko-Ae4BjmGgBT4uoZ4-AMF3BRCPFwVgh19XXkYWNMSc4pTeaE0N4Oym2uIs4duakF-fGpxQWJyal5qSXxosJGBkYmRkaGFsZmjoTFxqgCiWS8A</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>MEMORY DEVICE PRE-CHARGING COMMON SOURCE LINE AND OPERATING METHOD OF THE SAME</title><source>esp@cenet</source><creator>Park, Jonghoon ; Park, Sangsoo ; Yu, Jaeduk ; Lee, Yohan</creator><creatorcontrib>Park, Jonghoon ; Park, Sangsoo ; Yu, Jaeduk ; Lee, Yohan</creatorcontrib><description>A method of operating a memory device, the method includes applying a pass voltage to a plurality of word lines during a word line setup period, applying an on-voltage to an unselected ground select line at a first time point during the word line setup period, increasing a voltage of the plurality of word lines by applying a pre-charge voltage to the common source line at a second time point during the word line setup period, applying an off-voltage to the unselected ground select line at a third time point during the word line setup period, and applying a ground voltage to the common source line at a fourth time point during the word line setup period.</description><language>eng</language><subject>INFORMATION STORAGE ; PHYSICS ; STATIC STORES</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240704&DB=EPODOC&CC=US&NR=2024221836A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240704&DB=EPODOC&CC=US&NR=2024221836A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Park, Jonghoon</creatorcontrib><creatorcontrib>Park, Sangsoo</creatorcontrib><creatorcontrib>Yu, Jaeduk</creatorcontrib><creatorcontrib>Lee, Yohan</creatorcontrib><title>MEMORY DEVICE PRE-CHARGING COMMON SOURCE LINE AND OPERATING METHOD OF THE SAME</title><description>A method of operating a memory device, the method includes applying a pass voltage to a plurality of word lines during a word line setup period, applying an on-voltage to an unselected ground select line at a first time point during the word line setup period, increasing a voltage of the plurality of word lines by applying a pre-charge voltage to the common source line at a second time point during the word line setup period, applying an off-voltage to the unselected ground select line at a third time point during the word line setup period, and applying a ground voltage to the common source line at a fourth time point during the word line setup period.</description><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPDzdfX1D4pUcHEN83R2VQgIctV19nAMcvf0c1dw9vf19fdTCPYPDQJK-Xj6uSo4-rko-Ae4BjmGgBT4uoZ4-AMF3BRCPFwVgh19XXkYWNMSc4pTeaE0N4Oym2uIs4duakF-fGpxQWJyal5qSXxosJGBkYmRkaGFsZmjoTFxqgCiWS8A</recordid><startdate>20240704</startdate><enddate>20240704</enddate><creator>Park, Jonghoon</creator><creator>Park, Sangsoo</creator><creator>Yu, Jaeduk</creator><creator>Lee, Yohan</creator><scope>EVB</scope></search><sort><creationdate>20240704</creationdate><title>MEMORY DEVICE PRE-CHARGING COMMON SOURCE LINE AND OPERATING METHOD OF THE SAME</title><author>Park, Jonghoon ; Park, Sangsoo ; Yu, Jaeduk ; Lee, Yohan</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2024221836A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2024</creationdate><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>Park, Jonghoon</creatorcontrib><creatorcontrib>Park, Sangsoo</creatorcontrib><creatorcontrib>Yu, Jaeduk</creatorcontrib><creatorcontrib>Lee, Yohan</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Park, Jonghoon</au><au>Park, Sangsoo</au><au>Yu, Jaeduk</au><au>Lee, Yohan</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>MEMORY DEVICE PRE-CHARGING COMMON SOURCE LINE AND OPERATING METHOD OF THE SAME</title><date>2024-07-04</date><risdate>2024</risdate><abstract>A method of operating a memory device, the method includes applying a pass voltage to a plurality of word lines during a word line setup period, applying an on-voltage to an unselected ground select line at a first time point during the word line setup period, increasing a voltage of the plurality of word lines by applying a pre-charge voltage to the common source line at a second time point during the word line setup period, applying an off-voltage to the unselected ground select line at a third time point during the word line setup period, and applying a ground voltage to the common source line at a fourth time point during the word line setup period.</abstract><oa>free_for_read</oa></addata></record>
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title	MEMORY DEVICE PRE-CHARGING COMMON SOURCE LINE AND OPERATING METHOD OF THE SAME
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-20T16%3A30%3A17IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Park,%20Jonghoon&rft.date=2024-07-04&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2024221836A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true