PLASMA-ENHANCED MOLYBDENUM DEPOSITION

Embodiments of the disclosure are directed to methods of depositing a molybdenum film directly on a substrate surface (e.g., a low-κ dielectric material) by exposing the substrate surface to a molybdenum-containing precursor and an organosilane reducing agent at a temperature of less than or equal t...

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Hauptverfasser:	Yang, Yixiong, Sriram, Mandyam, Ailihumaer, Tuerxun, Sharma, Yogesh, Agarwal, Ashutosh, Gandikota, Srinivas
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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creator	Yang, Yixiong Sriram, Mandyam Ailihumaer, Tuerxun Sharma, Yogesh Agarwal, Ashutosh Gandikota, Srinivas
description	Embodiments of the disclosure are directed to methods of depositing a molybdenum film directly on a substrate surface (e.g., a low-κ dielectric material) by exposing the substrate surface to a molybdenum-containing precursor and an organosilane reducing agent at a temperature of less than or equal to 450° C. The molybdenum-containing precursor comprises one or more of molybdenum pentachloride (MoCl5), molybdenum dioxide dichloride (MoO2Cl2), molybdenum oxytetrachloride (MoOCl4), molybdenum hexafluoride (MoF6), molybdenum hexacarbonyl, bis(tert-butylimido)-bis(dimethylamido)molybdenum, or bis(ethylbenzene) molybdenum. The organosilane reducing agent comprises trimethylsilyl compounds, such as 1,4-bis(trimethylsilyl)-2-methyl-2,5-cyclohexadiene.
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The molybdenum-containing precursor comprises one or more of molybdenum pentachloride (MoCl5), molybdenum dioxide dichloride (MoO2Cl2), molybdenum oxytetrachloride (MoOCl4), molybdenum hexafluoride (MoF6), molybdenum hexacarbonyl, bis(tert-butylimido)-bis(dimethylamido)molybdenum, or bis(ethylbenzene) molybdenum. 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The molybdenum-containing precursor comprises one or more of molybdenum pentachloride (MoCl5), molybdenum dioxide dichloride (MoO2Cl2), molybdenum oxytetrachloride (MoOCl4), molybdenum hexafluoride (MoF6), molybdenum hexacarbonyl, bis(tert-butylimido)-bis(dimethylamido)molybdenum, or bis(ethylbenzene) molybdenum. The organosilane reducing agent comprises trimethylsilyl compounds, such as 1,4-bis(trimethylsilyl)-2-methyl-2,5-cyclohexadiene.</abstract><oa>free_for_read</oa></addata></record>
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subjects	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
title	PLASMA-ENHANCED MOLYBDENUM DEPOSITION
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