VERTICAL NON-VOLATILE MEMORY DEVICES AND METHODS FOR MANUFACTURING THE SAME

A vertical non-volatile memory device may include a mold structure including first and second insulation patterns and a first gate electrode, a semiconductor pattern extending through the mold structure in a first direction, a first charge insulation layer between the first insulation pattern and th...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Kim, Byongju, Kim, Chaeho, Kim, Youjung, Choi, Dongsung, Cheon, Changheon
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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