TRANSISTOR GATE-CHANNEL ARRANGEMENTS WITH MULTIPLE DIPOLE MATERIALS
Disclosed herein are transistor gate-channel arrangements with transistor gate stacks that include multiple dipole materials, and related methods and devices. For example, in some embodiments, a transistor gate-channel arrangement may include a channel material and a transistor gate stack. The trans...
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| creator | Huang, Cheng-Ying Koh, Shao Ming Atanasov, Sarah Radosavljevic, Marko Clinton, Evan Kobrinsky, Mauro J Wiedemer, Jami Galatage, Rohit Qayyum, Munzarin Lavric, Dan S Kavalieros, Jack T |
| description | Disclosed herein are transistor gate-channel arrangements with transistor gate stacks that include multiple dipole materials, and related methods and devices. For example, in some embodiments, a transistor gate-channel arrangement may include a channel material and a transistor gate stack. The transistor gate stack may include a gate electrode material and a gate dielectric material between the gate electrode material and the channel material, where the gate dielectric material includes a first dipole material and a second dipole material where one of the first and second dipole materials is a P-shifter dipole material and the other one is an N-shifter dipole material. |
| format | Patent |
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For example, in some embodiments, a transistor gate-channel arrangement may include a channel material and a transistor gate stack. The transistor gate stack may include a gate electrode material and a gate dielectric material between the gate electrode material and the channel material, where the gate dielectric material includes a first dipole material and a second dipole material where one of the first and second dipole materials is a P-shifter dipole material and the other one is an N-shifter dipole material.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240620&DB=EPODOC&CC=US&NR=2024204103A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240620&DB=EPODOC&CC=US&NR=2024204103A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Huang, Cheng-Ying</creatorcontrib><creatorcontrib>Koh, Shao Ming</creatorcontrib><creatorcontrib>Atanasov, Sarah</creatorcontrib><creatorcontrib>Radosavljevic, Marko</creatorcontrib><creatorcontrib>Clinton, Evan</creatorcontrib><creatorcontrib>Kobrinsky, Mauro J</creatorcontrib><creatorcontrib>Wiedemer, Jami</creatorcontrib><creatorcontrib>Galatage, Rohit</creatorcontrib><creatorcontrib>Qayyum, Munzarin</creatorcontrib><creatorcontrib>Lavric, Dan S</creatorcontrib><creatorcontrib>Kavalieros, Jack T</creatorcontrib><title>TRANSISTOR GATE-CHANNEL ARRANGEMENTS WITH MULTIPLE DIPOLE MATERIALS</title><description>Disclosed herein are transistor gate-channel arrangements with transistor gate stacks that include multiple dipole materials, and related methods and devices. 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For example, in some embodiments, a transistor gate-channel arrangement may include a channel material and a transistor gate stack. The transistor gate stack may include a gate electrode material and a gate dielectric material between the gate electrode material and the channel material, where the gate dielectric material includes a first dipole material and a second dipole material where one of the first and second dipole materials is a P-shifter dipole material and the other one is an N-shifter dipole material.</abstract><oa>free_for_read</oa></addata></record> |
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| title | TRANSISTOR GATE-CHANNEL ARRANGEMENTS WITH MULTIPLE DIPOLE MATERIALS |
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