HEAT DISSIPATION STRUCTURES FOR BONDED WAFERS

Semiconductor devices and methods of forming the same include a front-end-of-line (FEOL) layer. A back-end-of-line (BEOL) layer includes a thermal transfer structure in contact with the FEOL layer. A carrier wafer is bonded to the BEOL layer and includes a thermal dissipation structure in contact wi...

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Bibliographische Detailangaben
Hauptverfasser:	LIE, FEE LI, Clevenger, Lawrence A, Anderson, Brent A, Choi, Kisik, POLOMOFF, Nicholas Alexander, Xie, Ruilong, Angyal, Matthew, Hook, Terence
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	Semiconductor devices and methods of forming the same include a front-end-of-line (FEOL) layer. A back-end-of-line (BEOL) layer includes a thermal transfer structure in contact with the FEOL layer. A carrier wafer is bonded to the BEOL layer and includes a thermal dissipation structure in contact with the thermal transfer structure.