MEMORY DEVICE AND OPERATING METHOD THEREOF

A memory device includes a word line area that is between a bit line and a common source line. The word line area includes a plurality of stacks. A first area includes first stacks with a first resistance value in the word line area, a second area includes second stacks with a second resistance valu...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Choi, Yonghyuk, Yu, Jaeduk, Lee, Yohan
Format:	Patent
Sprache:	eng
Schlagworte:	INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
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