SEPARATE EPITAXY IN MONOLITHIC STACKED AND STEPPED NANOSHEETS

A semiconductor structure is presented including semiconductor layers of a first nanosheet stack, semiconductor layers of a second nanosheet stack formed over and having a stepped nanosheet formation with respect to the semiconductor layers of the first nanosheet stack, a first epitaxial growth form...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Mochizuki, Shogo, Sieg, Stuart, Seshadri, Indira, Strane, Jay William, Fan, Su Chen
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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