SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

A semiconductor substrate includes a plurality of emitter formation regions separated from each other in a Y direction between a pair of trenches, and a separation region located between the emitter formation regions. A p-type base region is formed in the semiconductor substrate of each of the emitt...

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Hauptverfasser: KURODA, Ryota, NAKANISHI, Sho, EIKYU, Katsumi, MATSUURA, Hitoshi
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator KURODA, Ryota
NAKANISHI, Sho
EIKYU, Katsumi
MATSUURA, Hitoshi
description A semiconductor substrate includes a plurality of emitter formation regions separated from each other in a Y direction between a pair of trenches, and a separation region located between the emitter formation regions. A p-type base region is formed in the semiconductor substrate of each of the emitter formation regions and the separation region. An n-type impurity region is formed in the base region of each emitter formation region. The impurity region is also formed in the base region at a position in contact with the pair of trenches in the separation region.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
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