Vertical FinFet Formation Using Directional Deposition

Disclosed herein are approaches for forming contacts in a 4F2 vertical dynamic random-access memory device. One method includes forming a hardmask over a plurality of pillars and over a plurality of anchors, wherein the pillars are separated from one another by a STI, and removing the STI and etchin...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Gu, Sipeng, Zhang, Qintao
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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