CLEANING METHOD AND PLASMA PROCESSING APPARATUS
In a specification step, the pressure within a processing container at the time of plasma cleaning is specified from the amount of damage to a protective film that is provided on an inner surface of the processing container and the cleaning rate at which accumulated matter that accumulates in the pr...
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| creator | NAKANO, Yoshiki KOTE, Kenichi NOGAMI, Takafumi |
| description | In a specification step, the pressure within a processing container at the time of plasma cleaning is specified from the amount of damage to a protective film that is provided on an inner surface of the processing container and the cleaning rate at which accumulated matter that accumulates in the processing container is removed, said amount of damage and said cleaning rate being treated as plasma cleaning parameters. In a cleaning step, the pressure within the processing container is adjusted to the pressure that was specified in the specification step, while a cleaning gas is supplied into the processing container, and microwaves are used to generate plasma within the processing container and plasma cleaning is performed within the processing container. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2024170267A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2024170267A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2024170267A13</originalsourceid><addsrcrecordid>eNrjZNB39nF19PP0c1fwdQ3x8HdRcPRzUQjwcQz2dVQICPJ3dg0OBkk6BgQ4BjmGhAbzMLCmJeYUp_JCaW4GZTfXEGcP3dSC_PjU4oLE5NS81JL40GAjAyMTQ3MDIzNzR0Nj4lQBAJemJuk</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>CLEANING METHOD AND PLASMA PROCESSING APPARATUS</title><source>esp@cenet</source><creator>NAKANO, Yoshiki ; KOTE, Kenichi ; NOGAMI, Takafumi</creator><creatorcontrib>NAKANO, Yoshiki ; KOTE, Kenichi ; NOGAMI, Takafumi</creatorcontrib><description>In a specification step, the pressure within a processing container at the time of plasma cleaning is specified from the amount of damage to a protective film that is provided on an inner surface of the processing container and the cleaning rate at which accumulated matter that accumulates in the processing container is removed, said amount of damage and said cleaning rate being treated as plasma cleaning parameters. In a cleaning step, the pressure within the processing container is adjusted to the pressure that was specified in the specification step, while a cleaning gas is supplied into the processing container, and microwaves are used to generate plasma within the processing container and plasma cleaning is performed within the processing container.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240523&DB=EPODOC&CC=US&NR=2024170267A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240523&DB=EPODOC&CC=US&NR=2024170267A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>NAKANO, Yoshiki</creatorcontrib><creatorcontrib>KOTE, Kenichi</creatorcontrib><creatorcontrib>NOGAMI, Takafumi</creatorcontrib><title>CLEANING METHOD AND PLASMA PROCESSING APPARATUS</title><description>In a specification step, the pressure within a processing container at the time of plasma cleaning is specified from the amount of damage to a protective film that is provided on an inner surface of the processing container and the cleaning rate at which accumulated matter that accumulates in the processing container is removed, said amount of damage and said cleaning rate being treated as plasma cleaning parameters. In a cleaning step, the pressure within the processing container is adjusted to the pressure that was specified in the specification step, while a cleaning gas is supplied into the processing container, and microwaves are used to generate plasma within the processing container and plasma cleaning is performed within the processing container.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNB39nF19PP0c1fwdQ3x8HdRcPRzUQjwcQz2dVQICPJ3dg0OBkk6BgQ4BjmGhAbzMLCmJeYUp_JCaW4GZTfXEGcP3dSC_PjU4oLE5NS81JL40GAjAyMTQ3MDIzNzR0Nj4lQBAJemJuk</recordid><startdate>20240523</startdate><enddate>20240523</enddate><creator>NAKANO, Yoshiki</creator><creator>KOTE, Kenichi</creator><creator>NOGAMI, Takafumi</creator><scope>EVB</scope></search><sort><creationdate>20240523</creationdate><title>CLEANING METHOD AND PLASMA PROCESSING APPARATUS</title><author>NAKANO, Yoshiki ; KOTE, Kenichi ; NOGAMI, Takafumi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2024170267A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2024</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>NAKANO, Yoshiki</creatorcontrib><creatorcontrib>KOTE, Kenichi</creatorcontrib><creatorcontrib>NOGAMI, Takafumi</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>NAKANO, Yoshiki</au><au>KOTE, Kenichi</au><au>NOGAMI, Takafumi</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>CLEANING METHOD AND PLASMA PROCESSING APPARATUS</title><date>2024-05-23</date><risdate>2024</risdate><abstract>In a specification step, the pressure within a processing container at the time of plasma cleaning is specified from the amount of damage to a protective film that is provided on an inner surface of the processing container and the cleaning rate at which accumulated matter that accumulates in the processing container is removed, said amount of damage and said cleaning rate being treated as plasma cleaning parameters. In a cleaning step, the pressure within the processing container is adjusted to the pressure that was specified in the specification step, while a cleaning gas is supplied into the processing container, and microwaves are used to generate plasma within the processing container and plasma cleaning is performed within the processing container.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | CLEANING METHOD AND PLASMA PROCESSING APPARATUS |
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