METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

A method for manufacturing a semiconductor device including steps as follows is provided. A first nitride-based semiconductor layer is formed over a substrate. A second nitride-based semiconductor layer is formed on the first nitride-based semiconductor layer. A gate electrode is formed over the sec...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: GAO, Wuhao, LIN, Fengming, ZHAO, Qiyue
Format: Patent
Sprache:eng
Schlagworte:
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