BILAYER SEAL MATERIAL FOR AIR GAPS IN SEMICONDUCTOR DEVICES

The present disclosure relates to a method for forming a semiconductor device includes forming an opening between first and second sidewalls of respective first and second terminals. The first and second sidewalls oppose each other. The method further includes depositing a first dielectric material...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	LIANG, Shuen-Shin, UENO, Tetsuji, CHEN, Ting-Ting, LIN, Keng-Chu, WANG, Chen-Han
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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