HIGH DENSITY STATIC RANDOM-ACCESS MEMORY

HIGH DENSITY STATIC RANDOM-ACCESS MEMORY

A semiconductor memory cell comprising six vertical-transport field-effect transistors (VTFET) on a wafer. The six VTFET are in a first layer. The six VTFET are in a first row.

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Bibliographische Detailangaben
Hauptverfasser: Anderson, Brent A, Chu, Albert M, Xie, Ruilong, Radens, Carl
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor memory cell comprising six vertical-transport field-effect transistors (VTFET) on a wafer. The six VTFET are in a first layer. The six VTFET are in a first row.