SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

According to one embodiment, a source layer includes a semiconductor layer including an impurity. A stacked body includes a plurality of electrode layers stacked with an insulator interposed. A gate layer is provided between the source layer and the stacked body. The gate layer is thicker than a thi...

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Bibliographische Detailangaben
1. Verfasser: ARAI, Shinya
Format: Patent
Sprache:eng
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