SEMICONDUCTOR DEVICE HAVING WORD LINE EMBEDDED IN GATE TRENCH

An apparatus that includes a semiconductor substrate having first and second gate trenches arranged in parallel and extending in a first direction, and first and second gate electrodes embedded in the first and second gate trenches, respectively, via a gate insulating film. Each of the first and sec...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Fujimoto, Toshiyasu, Matsumoto, Yoshihiro
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!