GLOBAL-SHUTTER PIXEL

GLOBAL-SHUTTER PIXEL

A global-shutter pixel includes a semiconductor substrate that has a storage node and a photodiode region. A front surface of the substrate has a first recessed region between the photodiode region and the storage node in a first direction parallel to the front surface, and a second recessed region...

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Hauptverfasser: ZANG, Hui, VENEZIA, Vincent, LEE, Cynthia Sun Yee
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator ZANG, Hui
VENEZIA, Vincent
LEE, Cynthia Sun Yee
description A global-shutter pixel includes a semiconductor substrate that has a storage node and a photodiode region. A front surface of the substrate has a first recessed region between the photodiode region and the storage node in a first direction parallel to the front surface, and a second recessed region between the first recessed region and the storage node in the first direction. The first and second recessed regions extend into the substrate to a respective first recess-depth and a second recess-depth that exceeds the first recess-depth. The photodiode region includes (i) a first doped-section spanning a depth-range and having a first dopant concentration, and (ii) a second doped-section between the front surface and the first doped-section and having a second dopant concentration that is less than the first dopant concentration. The first doped-section includes a protrusion that extends at least partially beneath the first recessed region in the first direction.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title GLOBAL-SHUTTER PIXEL
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