SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

A first trench extending in a Y direction is formed in each of a semiconductor substrate located in a cell region and the semiconductor substrate located in an outer peripheral region. A second trench is formed in the semiconductor substrate in the outer peripheral region so as to surround the cell...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: NISHIMURA, Tomoya, SAKAI, Atsushi, EIKYU, Katsumi
Format: Patent
Sprache:eng
Schlagworte:
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