TRANSISTOR WITH INTEGRATED SHORT CIRCUIT PROTECTION

A semiconductor device has first and second current terminals and a control terminal that can be biased to form an electrically conductive path from the first current terminal to the second current terminal through a channel region is provided with a temperature-sensitive current limiting device. Th...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Saxena, Tanuj, Radic, Ljubo, Pigott, John, Khemka, Vishnu, Qin, Ganming
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator Saxena, Tanuj
Radic, Ljubo
Pigott, John
Khemka, Vishnu
Qin, Ganming
description A semiconductor device has first and second current terminals and a control terminal that can be biased to form an electrically conductive path from the first current terminal to the second current terminal through a channel region is provided with a temperature-sensitive current limiting device. The current-limiting device is integrally formed from semiconductor material of the control terminal and is configured to cause a reduction in electrical current flowing through the channel region when the temperature of the device in the channel region exceeds a predetermined threshold temperature.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2024113045A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2024113045A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2024113045A13</originalsourceid><addsrcrecordid>eNrjZDAOCXL0C_YMDvEPUgj3DPFQ8PQLcXUPcgxxdVEI9vAPClFw9gxyDvUMUQgI8g9xdQ7x9PfjYWBNS8wpTuWF0twMym6uIc4euqkF-fGpxQWJyal5qSXxocFGBkYmhobGBiamjobGxKkCAHuVKIA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>TRANSISTOR WITH INTEGRATED SHORT CIRCUIT PROTECTION</title><source>esp@cenet</source><creator>Saxena, Tanuj ; Radic, Ljubo ; Pigott, John ; Khemka, Vishnu ; Qin, Ganming</creator><creatorcontrib>Saxena, Tanuj ; Radic, Ljubo ; Pigott, John ; Khemka, Vishnu ; Qin, Ganming</creatorcontrib><description>A semiconductor device has first and second current terminals and a control terminal that can be biased to form an electrically conductive path from the first current terminal to the second current terminal through a channel region is provided with a temperature-sensitive current limiting device. The current-limiting device is integrally formed from semiconductor material of the control terminal and is configured to cause a reduction in electrical current flowing through the channel region when the temperature of the device in the channel region exceeds a predetermined threshold temperature.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; BASIC ELECTRONIC CIRCUITRY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; PULSE TECHNIQUE ; SEMICONDUCTOR DEVICES</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20240404&amp;DB=EPODOC&amp;CC=US&amp;NR=2024113045A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,781,886,25568,76551</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20240404&amp;DB=EPODOC&amp;CC=US&amp;NR=2024113045A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Saxena, Tanuj</creatorcontrib><creatorcontrib>Radic, Ljubo</creatorcontrib><creatorcontrib>Pigott, John</creatorcontrib><creatorcontrib>Khemka, Vishnu</creatorcontrib><creatorcontrib>Qin, Ganming</creatorcontrib><title>TRANSISTOR WITH INTEGRATED SHORT CIRCUIT PROTECTION</title><description>A semiconductor device has first and second current terminals and a control terminal that can be biased to form an electrically conductive path from the first current terminal to the second current terminal through a channel region is provided with a temperature-sensitive current limiting device. The current-limiting device is integrally formed from semiconductor material of the control terminal and is configured to cause a reduction in electrical current flowing through the channel region when the temperature of the device in the channel region exceeds a predetermined threshold temperature.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>BASIC ELECTRONIC CIRCUITRY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>PULSE TECHNIQUE</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDAOCXL0C_YMDvEPUgj3DPFQ8PQLcXUPcgxxdVEI9vAPClFw9gxyDvUMUQgI8g9xdQ7x9PfjYWBNS8wpTuWF0twMym6uIc4euqkF-fGpxQWJyal5qSXxocFGBkYmhobGBiamjobGxKkCAHuVKIA</recordid><startdate>20240404</startdate><enddate>20240404</enddate><creator>Saxena, Tanuj</creator><creator>Radic, Ljubo</creator><creator>Pigott, John</creator><creator>Khemka, Vishnu</creator><creator>Qin, Ganming</creator><scope>EVB</scope></search><sort><creationdate>20240404</creationdate><title>TRANSISTOR WITH INTEGRATED SHORT CIRCUIT PROTECTION</title><author>Saxena, Tanuj ; Radic, Ljubo ; Pigott, John ; Khemka, Vishnu ; Qin, Ganming</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2024113045A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2024</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>BASIC ELECTRONIC CIRCUITRY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>PULSE TECHNIQUE</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Saxena, Tanuj</creatorcontrib><creatorcontrib>Radic, Ljubo</creatorcontrib><creatorcontrib>Pigott, John</creatorcontrib><creatorcontrib>Khemka, Vishnu</creatorcontrib><creatorcontrib>Qin, Ganming</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Saxena, Tanuj</au><au>Radic, Ljubo</au><au>Pigott, John</au><au>Khemka, Vishnu</au><au>Qin, Ganming</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>TRANSISTOR WITH INTEGRATED SHORT CIRCUIT PROTECTION</title><date>2024-04-04</date><risdate>2024</risdate><abstract>A semiconductor device has first and second current terminals and a control terminal that can be biased to form an electrically conductive path from the first current terminal to the second current terminal through a channel region is provided with a temperature-sensitive current limiting device. The current-limiting device is integrally formed from semiconductor material of the control terminal and is configured to cause a reduction in electrical current flowing through the channel region when the temperature of the device in the channel region exceeds a predetermined threshold temperature.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US2024113045A1
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
BASIC ELECTRONIC CIRCUITRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PULSE TECHNIQUE
SEMICONDUCTOR DEVICES
title TRANSISTOR WITH INTEGRATED SHORT CIRCUIT PROTECTION
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-17T13%3A49%3A35IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Saxena,%20Tanuj&rft.date=2024-04-04&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2024113045A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true