BACKSIDE POWER DELIVERY AND POWER GRID PATTERN TO SUPPORT 3D DIE STACKING
An apparatus and method for efficiently routing power signals across semiconductor dies. A semiconductor fabrication process (or process) places a first semiconductor die in an integrated circuit and stacks a second semiconductor die vertically adjacent to the first semiconductor die. The process fo...
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creator | Wuu, John J Schultz, Richard T |
description | An apparatus and method for efficiently routing power signals across semiconductor dies. A semiconductor fabrication process (or process) places a first semiconductor die in an integrated circuit and stacks a second semiconductor die vertically adjacent to the first semiconductor die. The process forms multiple backside metal layers vertically adjacent to a backside of a silicon substrate of the second semiconductor die. The process forms a first backside metal layer that includes at least a first power route that forms a rectangle within the first backside metal layer. The process forms a second backside metal layer that includes at least a second power rail that forms an L-shape within the second backside metal layer. The process connects one or more corners of the rectangle of the first power rail to a corresponding corner of a separate power rail of the second backside metal layer that forms an L-shape. |
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A semiconductor fabrication process (or process) places a first semiconductor die in an integrated circuit and stacks a second semiconductor die vertically adjacent to the first semiconductor die. The process forms multiple backside metal layers vertically adjacent to a backside of a silicon substrate of the second semiconductor die. The process forms a first backside metal layer that includes at least a first power route that forms a rectangle within the first backside metal layer. The process forms a second backside metal layer that includes at least a second power rail that forms an L-shape within the second backside metal layer. 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A semiconductor fabrication process (or process) places a first semiconductor die in an integrated circuit and stacks a second semiconductor die vertically adjacent to the first semiconductor die. The process forms multiple backside metal layers vertically adjacent to a backside of a silicon substrate of the second semiconductor die. The process forms a first backside metal layer that includes at least a first power route that forms a rectangle within the first backside metal layer. The process forms a second backside metal layer that includes at least a second power rail that forms an L-shape within the second backside metal layer. The process connects one or more corners of the rectangle of the first power rail to a corresponding corner of a separate power rail of the second backside metal layer that forms an L-shape.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | BACKSIDE POWER DELIVERY AND POWER GRID PATTERN TO SUPPORT 3D DIE STACKING |
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