INTERCONNECT STRUCTURE WITH INCREASED DECOUPLING CAPACITANCE

A semiconductor chip device includes a substrate with a first dielectric material of a first permittivity value. A power input line and ground line are positioned in the substrate and arranged to form a decoupling capacitor. A region of the substrate in between the power input line and the ground li...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Clevenger, Lawrence A, Chu, Albert M, Lanzillo, Nicholas Anthony
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CALCULATING COMPUTING COUNTING ELECTRIC DIGITAL DATA PROCESSING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PHYSICS SEMICONDUCTOR DEVICES
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