Footing Removal in Cut-Metal Process

A method includes forming a gate stack, which includes a first portion over a portion of a first semiconductor fin, a second portion over a portion of a second semiconductor fin, and a third portion connecting the first portion to the second portion. An anisotropic etching is performed on the third...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Huang, Ming-Chi, Chuang, Ying-Liang, Huang, Kuo-Bin, Yeh, Ming-Hsi
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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