NANOSHEET CHANNEL-TO-SOURCE AND DRAIN ISOLATION

A method and structures are used to fabricate a nanosheet semiconductor device. Nanosheet fins including nanosheet stacks including alternating silicon (Si) layers and silicon germanium (SiGe) layers are formed on a substrate and etched to define a first end and a second end along a first axis betwe...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Lie, Fee Li, Bergendahl, Marc A, Teehan, Sean, Cheng, Kangguo, Sporre, John R, Miller, Eric R
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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