MICROELECTRONIC DEVICES WITH A TIERED STACK OF CONDUCTIVE, INSULATIVE, AND PARTIALLY-SACRIFICIAL STRUCTURES, AND RELATED SYSTEMS AND METHODS

Microelectronic devices include a region with a tiered stack that includes insulative, conductive, and non-conductive structures arranged in tiers. The insulative structures vertically alternate with both the conductive and the non-conductive structures. Each of the conductive structures is vertical...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Shepherdson, Justin D, Kumar, Dheeraj, Lengade, Swapnil A, Li, Andrew L, Howder, Collin, Wells, David H
Format: Patent
Sprache:eng
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator Shepherdson, Justin D
Kumar, Dheeraj
Lengade, Swapnil A
Li, Andrew L
Howder, Collin
Wells, David H
description Microelectronic devices include a region with a tiered stack that includes insulative, conductive, and non-conductive structures arranged in tiers. The insulative structures vertically alternate with both the conductive and the non-conductive structures. Each of the conductive structures is vertically spaced from another of the conductive structures by at least one of the non-conductive structures and at least two of the insulative structures. A composition of the non-conductive structures differs from a composition of the insulative structures. In methods of fabrication, a precursor stack is formed to include the insulative structures vertically alternating with first and second non-conductive structures. In a region of the precursor stack, the first non-conductive structures are removed, forming voids between multi-structure tier groups. Conductive structures are formed in the voids. Electronic systems are also disclosed.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2024074177A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2024074177A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2024074177A13</originalsourceid><addsrcrecordid>eNqNjD0KwkAQhdNYiHqHAVsDGoXUy-yEDCZZ2ZlEUoUgayUq6DE8tNF4AKv3w_veNHqVjN5RQajeVYxgqWEkgSNrDgaUyZMFUYN7cBmgq2yNyg2tgCupCzN6U1k4GK9siqKNxaDnjHFIA-oHoPYk48rTwHwuW1Eq5duVpLmzMo8m5_7yCIufzqJlRop5HO63Ljzu_Slcw7OrJVknu3W626Sp2Wz_W70BVCdAdA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>MICROELECTRONIC DEVICES WITH A TIERED STACK OF CONDUCTIVE, INSULATIVE, AND PARTIALLY-SACRIFICIAL STRUCTURES, AND RELATED SYSTEMS AND METHODS</title><source>esp@cenet</source><creator>Shepherdson, Justin D ; Kumar, Dheeraj ; Lengade, Swapnil A ; Li, Andrew L ; Howder, Collin ; Wells, David H</creator><creatorcontrib>Shepherdson, Justin D ; Kumar, Dheeraj ; Lengade, Swapnil A ; Li, Andrew L ; Howder, Collin ; Wells, David H</creatorcontrib><description>Microelectronic devices include a region with a tiered stack that includes insulative, conductive, and non-conductive structures arranged in tiers. The insulative structures vertically alternate with both the conductive and the non-conductive structures. Each of the conductive structures is vertically spaced from another of the conductive structures by at least one of the non-conductive structures and at least two of the insulative structures. A composition of the non-conductive structures differs from a composition of the insulative structures. In methods of fabrication, a precursor stack is formed to include the insulative structures vertically alternating with first and second non-conductive structures. In a region of the precursor stack, the first non-conductive structures are removed, forming voids between multi-structure tier groups. Conductive structures are formed in the voids. Electronic systems are also disclosed.</description><language>eng</language><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20240229&amp;DB=EPODOC&amp;CC=US&amp;NR=2024074177A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20240229&amp;DB=EPODOC&amp;CC=US&amp;NR=2024074177A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Shepherdson, Justin D</creatorcontrib><creatorcontrib>Kumar, Dheeraj</creatorcontrib><creatorcontrib>Lengade, Swapnil A</creatorcontrib><creatorcontrib>Li, Andrew L</creatorcontrib><creatorcontrib>Howder, Collin</creatorcontrib><creatorcontrib>Wells, David H</creatorcontrib><title>MICROELECTRONIC DEVICES WITH A TIERED STACK OF CONDUCTIVE, INSULATIVE, AND PARTIALLY-SACRIFICIAL STRUCTURES, AND RELATED SYSTEMS AND METHODS</title><description>Microelectronic devices include a region with a tiered stack that includes insulative, conductive, and non-conductive structures arranged in tiers. The insulative structures vertically alternate with both the conductive and the non-conductive structures. Each of the conductive structures is vertically spaced from another of the conductive structures by at least one of the non-conductive structures and at least two of the insulative structures. A composition of the non-conductive structures differs from a composition of the insulative structures. In methods of fabrication, a precursor stack is formed to include the insulative structures vertically alternating with first and second non-conductive structures. In a region of the precursor stack, the first non-conductive structures are removed, forming voids between multi-structure tier groups. Conductive structures are formed in the voids. Electronic systems are also disclosed.</description><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjD0KwkAQhdNYiHqHAVsDGoXUy-yEDCZZ2ZlEUoUgayUq6DE8tNF4AKv3w_veNHqVjN5RQajeVYxgqWEkgSNrDgaUyZMFUYN7cBmgq2yNyg2tgCupCzN6U1k4GK9siqKNxaDnjHFIA-oHoPYk48rTwHwuW1Eq5duVpLmzMo8m5_7yCIufzqJlRop5HO63Ljzu_Slcw7OrJVknu3W626Sp2Wz_W70BVCdAdA</recordid><startdate>20240229</startdate><enddate>20240229</enddate><creator>Shepherdson, Justin D</creator><creator>Kumar, Dheeraj</creator><creator>Lengade, Swapnil A</creator><creator>Li, Andrew L</creator><creator>Howder, Collin</creator><creator>Wells, David H</creator><scope>EVB</scope></search><sort><creationdate>20240229</creationdate><title>MICROELECTRONIC DEVICES WITH A TIERED STACK OF CONDUCTIVE, INSULATIVE, AND PARTIALLY-SACRIFICIAL STRUCTURES, AND RELATED SYSTEMS AND METHODS</title><author>Shepherdson, Justin D ; Kumar, Dheeraj ; Lengade, Swapnil A ; Li, Andrew L ; Howder, Collin ; Wells, David H</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2024074177A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2024</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Shepherdson, Justin D</creatorcontrib><creatorcontrib>Kumar, Dheeraj</creatorcontrib><creatorcontrib>Lengade, Swapnil A</creatorcontrib><creatorcontrib>Li, Andrew L</creatorcontrib><creatorcontrib>Howder, Collin</creatorcontrib><creatorcontrib>Wells, David H</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Shepherdson, Justin D</au><au>Kumar, Dheeraj</au><au>Lengade, Swapnil A</au><au>Li, Andrew L</au><au>Howder, Collin</au><au>Wells, David H</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>MICROELECTRONIC DEVICES WITH A TIERED STACK OF CONDUCTIVE, INSULATIVE, AND PARTIALLY-SACRIFICIAL STRUCTURES, AND RELATED SYSTEMS AND METHODS</title><date>2024-02-29</date><risdate>2024</risdate><abstract>Microelectronic devices include a region with a tiered stack that includes insulative, conductive, and non-conductive structures arranged in tiers. The insulative structures vertically alternate with both the conductive and the non-conductive structures. Each of the conductive structures is vertically spaced from another of the conductive structures by at least one of the non-conductive structures and at least two of the insulative structures. A composition of the non-conductive structures differs from a composition of the insulative structures. In methods of fabrication, a precursor stack is formed to include the insulative structures vertically alternating with first and second non-conductive structures. In a region of the precursor stack, the first non-conductive structures are removed, forming voids between multi-structure tier groups. Conductive structures are formed in the voids. Electronic systems are also disclosed.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US2024074177A1
source esp@cenet
title MICROELECTRONIC DEVICES WITH A TIERED STACK OF CONDUCTIVE, INSULATIVE, AND PARTIALLY-SACRIFICIAL STRUCTURES, AND RELATED SYSTEMS AND METHODS
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-31T22%3A39%3A27IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Shepherdson,%20Justin%20D&rft.date=2024-02-29&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2024074177A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true