VARIABLE RESISTANCE MEMORY DEVICE AND ELECTRONIC DEVICE INCLUDING THE SAME

Provided area a variable resistance memory device and/or an electronic device including the same. The variable resistance memory device includes: a resistance change layer including a metal oxide having an oxygen deficient ratio greater than or equal to about 9%; a semiconductor layer on the resista...

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Hauptverfasser:	KANG, Jooheon, KIM, Sunho, AHN, Dongho, PARK, Garam, SONG, Hyunjae, WOO, Myunghun, KIM, Seyun, YANG, Seungyeul, KIM, Yumin, LEE, Jinwoo
Format:	Patent
Sprache:	eng
Schlagworte:	ELECTRICITY
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creator	KANG, Jooheon KIM, Sunho AHN, Dongho PARK, Garam SONG, Hyunjae WOO, Myunghun KIM, Seyun YANG, Seungyeul KIM, Yumin LEE, Jinwoo
description	Provided area a variable resistance memory device and/or an electronic device including the same. The variable resistance memory device includes: a resistance change layer including a metal oxide having an oxygen deficient ratio greater than or equal to about 9%; a semiconductor layer on the resistance change layer; a gate insulating layer on the semiconductor layer; and a plurality of electrodes on the gate insulating layer to be apart from each other.
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title	VARIABLE RESISTANCE MEMORY DEVICE AND ELECTRONIC DEVICE INCLUDING THE SAME
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