MEMORY DEVICE AND PROGRAMMING METHOD THEREOF
A programming method of a memory device comprising a multi-level cell is introduced. The programming method includes applying a sequence of program pulses comprising at least one set pulse and at least one reset pulse to the multi-level cell; determining whether the resistance of the multi-level cel...
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| creator | Guy, Jeremy |
| description | A programming method of a memory device comprising a multi-level cell is introduced. The programming method includes applying a sequence of program pulses comprising at least one set pulse and at least one reset pulse to the multi-level cell; determining whether the resistance of the multi-level cell is in a target range after each program pulse of the sequence of program pulses is applied to the multi-level cell; keeping applying the sequence of program pulses to the multi-level cell in response to determining that the resistance of the multi-level cell is not in the target range; and stopping applying the sequence of program pulses to the multi-level cell in response to determining that the resistance of the multi-level cell is in the target range. |
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The programming method includes applying a sequence of program pulses comprising at least one set pulse and at least one reset pulse to the multi-level cell; determining whether the resistance of the multi-level cell is in a target range after each program pulse of the sequence of program pulses is applied to the multi-level cell; keeping applying the sequence of program pulses to the multi-level cell in response to determining that the resistance of the multi-level cell is not in the target range; and stopping applying the sequence of program pulses to the multi-level cell in response to determining that the resistance of the multi-level cell is in the target range.</description><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNDxdfX1D4pUcHEN83R2VXD0c1EICPJ3D3L09fX0c1fwdQ3x8HdRCPFwDXL1d-NhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfGhwUYGRiYGZkYWhiaOhsbEqQIAKB4mDg</recordid><startdate>20240222</startdate><enddate>20240222</enddate><creator>Guy, Jeremy</creator><scope>EVB</scope></search><sort><creationdate>20240222</creationdate><title>MEMORY DEVICE AND PROGRAMMING METHOD THEREOF</title><author>Guy, Jeremy</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2024062814A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2024</creationdate><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>Guy, Jeremy</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Guy, Jeremy</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>MEMORY DEVICE AND PROGRAMMING METHOD THEREOF</title><date>2024-02-22</date><risdate>2024</risdate><abstract>A programming method of a memory device comprising a multi-level cell is introduced. The programming method includes applying a sequence of program pulses comprising at least one set pulse and at least one reset pulse to the multi-level cell; determining whether the resistance of the multi-level cell is in a target range after each program pulse of the sequence of program pulses is applied to the multi-level cell; keeping applying the sequence of program pulses to the multi-level cell in response to determining that the resistance of the multi-level cell is not in the target range; and stopping applying the sequence of program pulses to the multi-level cell in response to determining that the resistance of the multi-level cell is in the target range.</abstract><oa>free_for_read</oa></addata></record> |
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| title | MEMORY DEVICE AND PROGRAMMING METHOD THEREOF |
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