TRANSISTOR, INTEGRATED CIRCUIT, AND MANUFACTURING METHOD OF TRANSISTOR

TRANSISTOR, INTEGRATED CIRCUIT, AND MANUFACTURING METHOD OF TRANSISTOR

A transistor includes a gate electrode, a ferroelectric layer, a source pattern, a drain pattern, and a channel layer. The ferroelectric layer is disposed on the gate electrode. The source pattern and the drain pattern are disposed over the ferroelectric layer. The channel layer has a base and fins...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Yeong, Sai-Hooi, Vellianitis, Georgios
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A transistor includes a gate electrode, a ferroelectric layer, a source pattern, a drain pattern, and a channel layer. The ferroelectric layer is disposed on the gate electrode. The source pattern and the drain pattern are disposed over the ferroelectric layer. The channel layer has a base and fins protruding from the base. The base is in contact with the ferroelectric layer. The fins are located between the source pattern and the drain pattern.