SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
A semiconductor device includes a base layer including a silicon material. A field effect transistor is disposed on a first surface of the base layer. A first insulating interlayer covers the field effect transistor, A buried vertical rail passes through the first insulating interlayer and the base...
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| creator | LEE, Dongick Anthony Gwak, Minchan Kim, Youngwoo Kim, Gukhee Last Name not provide, Sangcheol |
| description | A semiconductor device includes a base layer including a silicon material. A field effect transistor is disposed on a first surface of the base layer. A first insulating interlayer covers the field effect transistor, A buried vertical rail passes through the first insulating interlayer and the base layer. The buried vertical rail includes a first metal pattern and a first barrier pattern surrounding a sidewall of the first metal pattern. A first lower insulating interlayer is on the second surface of the base layer. A lower contact plug passes through the first lower insulating interlayer and directly contacts a lower surface of the buried vertical rail. The lower contact plug includes a second metal pattern and a second barrier pattern surrounding a sidewall of the second metal pattern. A bottom surface of the first metal pattern and a top surface of the second metal pattern directly contact each other. |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
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