HIGH ELECTRON MOBILITY TRANSISTOR DEVICES HAVING A SILICIDED POLYSILICON LAYER

The present disclosure relates generally to structures in semiconductor devices and methods of forming the same. More particularly, the present disclosure relates to high electron mobility transistor (HEMT) devices having a silicided polysilicon layer. The present disclosure may provide an active re...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	ADUSUMILLI, SIVA P, JAIN, VIBHOR, KANTAROVSKY, JOHNATAN AVRAHAM, LEVY, MARK DAVID, GEBRESELASIE, EPHREM, NGU, YVES
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!