NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE

A nitride semiconductor light emitting device includes an active layer provided between P-type and N-type nitride semiconductor layers, a first strain reducing layer including first InGaN films and first GaN films alternately stacked between the N-type nitride semiconductor layer and the active layer, and a second strain reducing layer including a second InGaN film and a second GaN film alternately stacked between the first strain reducing layer and the active layer. The active layer includes an InGaN well layer, a barrier layer, an AlGaN layer between the InGaN well layer and the barrier layer, and an intermediate lattice layer between the InGaN well layer and the AlGaN layer The intermediate lattice layer including a nitride single crystal having a lattice larger than a first lattice of the InGaN well layer and smaller than a second lattice of the AlGaN layer.