FIELD EFFECT TRANSISTOR WITH NEGATIVE CAPACITANCE DIELECTRIC STRUCTURES

FIELD EFFECT TRANSISTOR WITH NEGATIVE CAPACITANCE DIELECTRIC STRUCTURES

The structure of a semiconductor device with negative capacitance (NC) dielectric structures and a method of fabricating the semiconductor device are disclosed. A method of fabricating the semiconductor device includes forming a fin structure with a fin base portion and a fin top portion on a substr...

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Hauptverfasser: CHANG, Keh-Jeng, YANG, Chansyun David, YANG, Chan-Lon
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator CHANG, Keh-Jeng
YANG, Chansyun David
YANG, Chan-Lon
description The structure of a semiconductor device with negative capacitance (NC) dielectric structures and a method of fabricating the semiconductor device are disclosed. A method of fabricating the semiconductor device includes forming a fin structure with a fin base portion and a fin top portion on a substrate, forming a spacer structure in a first region of the fin top portion, and forming a gate structure on a second region of the fin top portion. The spacer structure includes a first NC dielectric material and the gate structure includes a gate dielectric layer with a second NC dielectric material different from the first NC dielectric material.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title FIELD EFFECT TRANSISTOR WITH NEGATIVE CAPACITANCE DIELECTRIC STRUCTURES
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