Contact Plug with Impurity Variation

A method includes forming an opening in a dielectric layer, depositing a seed layer in the opening, wherein first portions of the seed layer have a first concentration of impurities, exposing the first portions of the seed layer to a plasma, wherein after exposure to the plasma the first portions ha...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Su, Ching-Hwanq, Lee, Chia-Ching, Tsau, Hsueh Wen, Wu, Chung-Chiang, Hung, Cheng-Lung
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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