Magnetic Tunnel Junction Device and Method of Forming Same

A semiconductor device and a method of forming the same are provided. The method includes forming a bottom electrode layer over a substrate. A magnetic tunnel junction (MTJ) layers are formed over the bottom electrode layer. A top electrode layer is formed over the MTJ layers. The top electrode laye...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Liu, Kuang-I, Lin, Shih-Ho, Wu, Cheng-Yi, Liang, Jinn-Kwei, Shen, Bo-Jhih, Liou, Joung-Wei, Lin, Chin-Hsing, Hsu, Li-Te, Tsai, Han-Ting, Chiu, Yi-Wei
Format:	Patent
Sprache:	eng
Schlagworte:	ELECTRICITY INFORMATION STORAGE PHYSICS STATIC STORES
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