THREE-DIMENSIONAL NAND MEMORY DEVICE AND FABRICATION METHOD

A method of forming a three-dimensional (3D) NAND memory device includes: forming a gate line slit through a plurality of alternating layers of an oxide layer and a conductive material layer, where the conductive material layer is further formed on a sidewall and a bottom of the gate line slit; perf...

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Bibliographische Detailangaben

Hauptverfasser:	XU, Wei, XUE, Lei, YAN, Longxiang, HUO, Zongliang, XU, Bo, WANG, Fazhan
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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