CAPACITOR INTEGRATED WITH MEMORY ELEMENT OF MEMORY CELL

CAPACITOR INTEGRATED WITH MEMORY ELEMENT OF MEMORY CELL

The present disclosure relates to semiconductor structures and, more particularly, to a capacitor integrated with a memory element of a memory cell and methods of manufacture. The structure includes: at least one memory cell comprising a memory element with a top conductor material; and a capacitor...

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Hauptverfasser: Paul, Bipul C, Northrop, Gregory A, Versaggi, Joseph, Gopinath, Venkatesh P
Format: Patent
Sprache:eng
Schlagworte:
INFORMATION STORAGE
PHYSICS
STATIC STORES
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creator Paul, Bipul C
Northrop, Gregory A
Versaggi, Joseph
Gopinath, Venkatesh P
description The present disclosure relates to semiconductor structures and, more particularly, to a capacitor integrated with a memory element of a memory cell and methods of manufacture. The structure includes: at least one memory cell comprising a memory element with a top conductor material; and a capacitor connected to the memory element by the top conductor material.
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subjects INFORMATION STORAGE
PHYSICS
STATIC STORES
title CAPACITOR INTEGRATED WITH MEMORY ELEMENT OF MEMORY CELL
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